THE THIN FILM CAPACITORS WITH AlN DIELECTRIC

The work is focused on thin film technologies especially on sputtering of dielectric thin film layers. The set of thin film capacitors was created on silica glass substrate. Aluminum electrodes of separated capacitors are deposited by method of vacuum evaporation. The AlN dielectric layer was prepared by reactive high frequency sputtering from aluminum target in nitrogen atmosphere. Dielectric layers were deposited at different conditions of sputtering. The power plasma generator and time of sputtering were changed in useful range. Partial pressure of Ar and N was constant for all samples. Part of work is concerned to investigation of dependence of electrical capacity of thin film capacitors on thickness of dielectric layer. The permittivity of dielectric layer does not constant but can be varied with thickness for layer with low thickness (ones or tens nm). Thickness and thus electrical capacity are depending on distance between target and substrate. Thickness of dielectric layer was measured by using of confocal microscope.